PSMN4R5-40PS Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel 40 V 4.6 mΩ standard level MOSFET

NXP Semiconductors
PSMN4R5-40PS
N-channel 40 V 4.6 mΩ standard level MOSFET
Table 6. Characteristics …continued
Tested to JEDEC standards where applicable.
Symbol Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C; see
Figure 17
t_rr
reverse recovery time I_S = 50 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
V_DS = 20 V
Q_r
recovered charge
I_S = 50 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
V_DS = 20 V; T_j = 25 °C
[1] Measured 3 mm from package.
Min Typ Max Unit
-
0.75 1.2 V
-
40
-
ns
-
33
-
nC
300
I_D
(A)
20 ¹⁵
10
250
7.5
200
150
100
50
0
0
1
2
003aad020
V_GS (V) = 7
6.5
6
5.5
5
4.5
3
4
5
6
V_DS (V)
10
R_DSon
(mΩ)
8
003aad021
6
V_GS (V) = 6.5
7
7.5
6
10
4
15
20
2
0
50
100
150
200
250
I_D (A)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of drain current; typical values
PSMN4R5-40PS_2
Product data sheet
Rev. 02 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
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