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| PSMN2R5-60PL Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel 60 V, 2.6 mΩ logic level MOSFET in SOT78 | |||
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NXP Semiconductors
PSMN2R5-60PL
N-channel 60 V, 2.6 m⦠logic level MOSFET in SOT78
Symbol
Parameter
Conditions
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 48 V; VGS = 10 V;
Fig. 13; Fig. 14
ID = 25 A; VDS = 48 V; VGS = 5 V;
Fig. 13; Fig. 14
QGS
gate-source charge
ID = 25 A; VDS = 48 V; VGS = 10 V;
QGD
gate-drain charge
Fig. 13; Fig. 14
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 15
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 25 V; RL = 1.8 Ω; VGS = 5 V;
RG(ext) = 5 Ω
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V
Min Typ Max Unit
-
223 -
nC
-
120 -
nC
-
25.6 -
nC
-
41.2 -
nC
-
11700 -
pF
-
1025 -
pF
-
490 -
pF
-
71
-
ns
-
119 -
ns
-
224 -
ns
-
128 -
ns
-
0.77 1.2 V
-
53
-
ns
-
98
-
nC
360
ID
(A)
270
VGS(V) = 10
5
003aai159
3.5
10
RDSon
(mΩ)
7.5
003aai160
3
180
5
2.8
90
2.6
2.5
2.4
2.2
0
0
0.5
1
1.5 VDS(V) 2
0
0
2.5
5
7.5 VGS(V) 10
Fig. 6.
Tj = 25 °C; tp = 300 μs
Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
PSMN2R5-60PL
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 February 2013
© NXP B.V. 2013. All rights reserved
6 / 13
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