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| PSMN2R5-60PL Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel 60 V, 2.6 mΩ logic level MOSFET in SOT78 | |||
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NXP Semiconductors
PSMN2R5-60PL
N-channel 60 V, 2.6 m⦠logic level MOSFET in SOT78
1
Zth(j-mb)
(K/W)
10-1
= 0.5
0.2
0.1
003aaf570
0.05
10-2
0.02
P
tp
T
single shot
tp
t
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration.
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 9; Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 9
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 9
IDSS
drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 175 °C
IGSS
gate leakage current VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 11
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 11
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 12; Fig. 11
RG
gate resistance
f = 1 MHz
Min Typ Max Unit
60
-
-
V
54
-
-
V
1.4 1.7 2.1 V
-
-
2.45 V
0.5 -
-
V
-
0.08 1
µA
-
-
500 µA
-
2
100 nA
-
2
100 nA
-
2
2.6 mΩ
-
2.3 2.9 mΩ
-
-
5.6 mΩ
0.5 1
2
Ω
PSMN2R5-60PL
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 February 2013
© NXP B.V. 2013. All rights reserved
5 / 13
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