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PSMN016-100PS Datasheet, PDF (6/15 Pages) NXP Semiconductors – N-channel 100V 16 mΩ standard level MOSFET in TO220
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NXP Semiconductors
PSMN016-100PS
N-channel 100V 16 mΩ standard level MOSFET in TO220
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
90
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
100
ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10 1
ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 11 2
and 10
IDSS
IGSS
RDSon
RG
ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10 -
drain leakage current VDS = 100 V; VGS = 0 V; Tj = 125 °C
-
VDS = 100 V; VGS = 0 V; Tj = 25 °C
-
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
drain-source on-state
resistance
VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 -
VGS = 10 V; ID = 15 A; Tj = 175 °C; see Figure 12 -
VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 -
internal gate resistance f = 1 MHz
-
(AC)
Dynamic characteristics
QG(tot)
QGS
QGS(th)
total gate charge
gate-source charge
pre-threshold
gate-source charge
ID = 0 A; VDS = 0 V; VGS = 10 V; see Figure 14 -
ID = 30 A; VDS = 50 V; VGS = 10 V; see Figure 14 -
and 15
-
ID = 30 A; VDS = 50 V; VGS = 10 V; see Figure 14 -
QGS(th-pl) post-threshold
-
gate-source charge
QGD
gate-drain charge
ID = 30 A; VDS = 50 V; VGS = 10 V; see Figure 14 -
and 15
VGS(pl)
gate-source plateau VDS = 50 V; see Figure 14 and 15
-
voltage
Ciss
input capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
-
Coss
output capacitance
see Figure 16
-
Crss
reverse transfer
-
capacitance
td(on)
turn-on delay time
VDS = 50 V; RL = 1.7 Ω; VGS = 10 V;
-
tr
rise time
RG(ext) = 4.7 Ω; Tj = 25 °C
-
td(off)
turn-off delay time
-
tf
fall time
-
Source-drain diode
VSD
source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C; see Figure 17 -
trr
reverse recovery time IS = 10 A; dIS/dt = 100 A/µs; VGS = 0 V;
-
Qr
recovered charge
VDS = 50 V
-
Typ Max Unit
-
-
V
-
-
V
-
-
V
3
4
V
-
4.8 V
-
100 µA
0.05 5
µA
10
100 nA
10
100 nA
-
28.8 mΩ
36.4 44.8 mΩ
13
16
mΩ
0.9 -
Ω
40
-
nC
49
-
nC
12
-
nC
7.75 -
nC
4.25 -
nC
15
-
nC
4.5 -
V
2404 -
pF
189 -
pF
113 -
pF
17
-
ns
23
-
ns
36
-
ns
18
-
ns
0.8 1.2 V
54
-
ns
126 -
nC
PSMN016-100PS_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 1 March 2010
© NXP B.V. 2010. All rights reserved.
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