PSMN016-100PS Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel 100V 16 mΩ standard level MOSFET in TO220

PSMN016-100PS
N-channel 100V 16 mΩ standard level MOSFET in TO220
Rev. 01 — 1 March 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for standard level gate drive
1.3 Applications
„ DC-to-DC converters
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_j = 25 °C; V_GS = 10 V;
see Figure 1
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
T_j
junction temperature
Avalanche ruggedness
E_DS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
V_GS = 10 V; T_j(init) = 25 °C;
I_D = 60 A; V_sup ≤ 100 V;
unclamped; R_GS = 50 Ω
Q_GD
Q_G(tot)
gate-drain charge
total gate charge
V_GS = 10 V; I_D = 30 A;
V_DS = 50 V; see Figure 14
and 15
Static characteristics
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 15 A;
T_j = 100 °C; see Figure 12
V_GS = 10 V; I_D = 15 A;
T_j = 25 °C; see Figure 13
Min Typ Max Unit
-
-
100 V
-
-
96 A
-
-
148 W
-55 -
175 °C
-
-
101 mJ
-
15 -
nC
-
49 -
nC
-
-
28.8 mΩ
-
13 16 mΩ