PMEM4020APD Datasheet, PDF (6/13 Pages) NXP Semiconductors – PNP transistor/Schottky rectifier module

NXP Semiconductors
PMEM4020APD
PNP transistor/Schottky rectifier module
10³
I_F
(mA)
10²
(1)
(2)
(3)
10
mdb669
1
10^−1
0
0.2
0.4
0.6
V_F (V)
Schottky barrier rectifier
(1) T_amb = 150 °C
(2) T_amb = 85 °C
(3) T_amb = 25 °C
Fig 1. Forward current as a function of forward
voltage; typical values
100
C_d
(pF)
80
mdb671
60
40
20
0
0
5
10
Schottky barrier rectifier;
T_amb = 25 °C; f = 1 MHz
15
20
V_R (V)
Fig 3. Diode capacitance as a function of reverse
voltage; typical values
10⁵
I_R
(µA)
(1)
10⁴
mdb670
10³
(2)
10²
10
(3)
1
0
10
20
30 _{VR (V)} 40
Schottky barrier rectifier
(1) T_amb = 150 °C
(2) T_amb = 85 °C
(3) T_amb = 25 °C
Fig 2. Reverse current as a function of reverse
voltage; typical values
1200
h_FE
1000
(1)
800
mhc088
600
(2)
400
(3)
200
0
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
PNP transistor; V_CE = −5 V
(1) T_amb = 150 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 4. DC current gain as a function of collector
current; typical values
PMEM4020APD_2
Product data sheet
Rev. 02 — 31 August 2009
© NXP B.V. 2009. All rights reserved.
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