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PMEM4020APD Datasheet, PDF (1/13 Pages) NXP Semiconductors – PNP transistor/Schottky rectifier module
PMEM4020APD
PNP transistor/Schottky rectifier module
Rev. 02 — 31 August 2009
Product data sheet
1. Product profile
1.1 General description
Combination of a PNP transistor with low VCEsat and high current capability and a planar
Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT457
(SC-74) small plastic package. NPN complement: PMEM4020AND
1.2 Features
I 600 mW total power dissipation
I High current capability up to 2 A
I Reduces printed-circuit board area required
I Reduces pick and place costs
I Small plastic SMD package
I Transistor
N Low collector-emitter saturation voltage
I Diode
N Ultra high-speed switching
N Very low forward voltage
N Guard ring protected
1.3 Applications
I DC-to-DC converters
I Inductive load drivers
I General purpose load drivers
I Reverse polarity protection circuits
I MOSFET drivers
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
PNP transistor
VCEO
collector-emitter voltage open base
-
-
−40 V
IC
collector current (DC)
continuous;
[1] -
-
−2
A
Ts ≤ 55 °C