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| PMDPB70XP Datasheet, PDF (6/15 Pages) NXP Semiconductors – 30 V, dual P-channel Trench MOSFET | |||
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NXP Semiconductors
PMDPB70XP
30 V, dual P-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics (per transistor)
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS
IGSS
RDSon
gfs
drain leakage current
gate leakage current
drain-source on-state
resistance
forward
transconductance
VDS = -30 V; VGS = 0 V; Tj = 25 °C
VDS = -30 V; VGS = 0 V; Tj = 150 °C
VGS = 12 V; VDS = 0 V; Tj = 25 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; ID = -2.9 A; Tj = 25 °C
VGS = -4.5 V; ID = -2.9 A; Tj = 150 °C
VGS = -2.5 V; ID = -1.6 A; Tj = 25 °C
VDS = -10 V; ID = -2.9 A; Tj = 25 °C
Dynamic characteristics (per transistor)
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
VDS = -15 V; ID = -2.9 A; VGS = -5 V;
Tj = 25 °C
VDS = -15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode (per transistor)
VDS = -15 V; ID = -2.9 A; VGS = -5 V;
RG(ext) = 6 â¦; Tj = 25 °C
VSD
source-drain voltage IS = -1.2 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
-30 -
-
V
-0.45 -0.7 -1
V
-
-
-1
µA
-
-
-10 µA
-
-
100 nA
-
-
100 nA
-
70
87
mâ¦
-
110 137 mâ¦
-
89
110 mâ¦
-
10
-
S
-
5.2 7.8 nC
-
1.1 -
nC
-
0.95 -
nC
-
680 -
pF
-
54 -
pF
-
40
-
pF
-
3
-
ns
-
15 -
ns
-
112 -
ns
-
48 -
ns
-
-0.8 -1.2 V
PMDPB70XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 9 March 2012
© NXP B.V. 2012. All rights reserved.
6 of 15
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