PMDPB70XP Datasheet, PDF (4/15 Pages) NXP Semiconductors – 30 V, dual P-channel Trench MOSFET

NXP Semiconductors
PMDPB70XP
30 V, dual P-channel Trench MOSFET
-10²
I_D
(A)
-10
Limit R_DSon = V_DS/I_D
017aaa397
(1)
-1
(2)
(3)
(4)
-10^-1
(5)
(6)
-10^-2
-10^-1
-1
-10
-10²
V_DS (V)
I_DM = single pulse
(1) t_p = 10 µs
(2) t_p = 100 µs
(3) DC; T_sp = 25 °C
(4) t_p = 10 ms
(5) t_p = 100 ms
(6) DC; T_amb = 25 °C; drain mounting pad 6 cm²
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Per transistor
R_th(j-a)
thermal resistance
from junction to
ambient
R_th(j-sp)
thermal resistance
from junction to solder
point
Conditions
in free air
in free air; t ≤ 5 s
in free air
Min Typ Max Unit
[1]
-
[2]
-
[2]
-
-
223 256 K/W
93
107 K/W
55
63
K/W
10 15 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm².
PMDPB70XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 March 2012
© NXP B.V. 2012. All rights reserved.
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