PMBTA44 Datasheet, PDF (6/12 Pages) NXP Semiconductors – 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PMBTA44
400 V, 0.3 A NPN high-voltage low V_CEsat (BISS) transistor
200
h_FE
150
100
50
006aab190
(1)
(2)
(3)
0
10^−1
1
10
10²
10³
I_C (mA)
V_CE = 10 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
1.2
V_BE
(V)
0.8
(1)
(2)
(3)
0.4
006aab192
0.3
I_B (mA) = 26
I_C
(A)
0.2
23.4 _20.8
18.2 _15.6
13
10.4
7.8
5.2
0.1
2.6
006aab191
0
0
1
2
3
4
5
V_CE (V)
T_amb = 25 °C
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
1.2
V_BEsat
(V)
(1)
0.8
(2)
(3)
0.4
006aab193
0
10^−1
1
10
10²
10³
I_C (mA)
V_CE = 10 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 5. Base-emitter voltage as a function of collector
current; typical values
0
10^−1
1
10
10²
10³
I_C (mA)
I_C/I_B = 5
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 6. Base-emitter saturation voltage as a function of
collector current; typical values
PMBTA44_1
Product data sheet
Rev. 01 — 22 February 2008
© NXP B.V. 2008. All rights reserved.
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