PMBTA44 Datasheet, PDF (5/12 Pages) NXP Semiconductors – 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PMBTA44
400 V, 0.3 A NPN high-voltage low V_CEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
I_CBO
collector-base cut-off V_CB = 320 V; I_E = 0 A
-
-
100 nA
current
V_CB = 320 V; I_E = 0 A;
-
-
10
µA
T_j = 150 °C
I_EBO
emitter-base cut-off V_EB = 4 V; I_C = 0 A
current
-
-
100 nA
h_FE
DC current gain
V_CE = 10 V
I_C = 10 mA
50
-
I_C = 50 mA
[1] ₄₅
-
I_C = 100 mA
[1] ₄₀
-
V_CEsat collector-emitter
I_C = 1 mA; I_B = 0.1 mA
-
-
saturation voltage _{IC = 10 mA; IB = 1 mA}
-
-
I_C = 50 mA; I_B = 5 mA ^[1] -
-
V_BEsat
base-emitter
I_C = 10 mA; I_B = 1 mA ^[1] -
-
saturation voltage
200
-
-
400 mV
500 mV
750 mV
850 mV
f_T
transition frequency V_CE = 10 V; I_E = 10 mA;
20
-
-
MHz
f = 100 MHz
C_c
collector capacitance V_CB = 20 V; I_E = i_e = 0 A;
-
-
7
pF
f = 1 MHz
C_e
emitter capacitance V_EB = 0.5 V;
-
-
180 pF
I_C = i_c = 0 A; f = 1 MHz
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
PMBTA44_1
Product data sheet
Rev. 01 — 22 February 2008
© NXP B.V. 2008. All rights reserved.
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