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PDTA144V Datasheet, PDF (6/18 Pages) NXP Semiconductors – PNP resistor-equipped transistors; R1 = 47 kW, R2 = 10 kW | |||
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NXP Semiconductors
PDTA144V series
PNP resistor-equipped transistors; R1 = 47 kâ¦, R2 = 10 kâ¦
103
hFE
102
10
006aaa111
(2) (1)
(3)
â1
VCEsat
(V)
â10â1
006aaa112
(1)
(2)
(3)
1
â10â1
â1
â10
â102
IC (mA)
VCE = â5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = â40 °C
Fig 1. DC current gain as a function of collector
current; typical values
â10
006aaa113
VI(on)
(1)
(V)
(2)
(3)
â10â2
â1
â10
â102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = â40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
â10
006aaa114
VI(off)
(1)
(V)
(2)
(3)
â1
â10â1
â1
â10
â102
IC (mA)
VCE = â0.3 V
(1) Tamb = â40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values
â1
â10â1
â1
â10
IC (mA)
VCE = â5 V
(1) Tamb = â40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. Off-state input voltage as a function of
collector current; typical values
PDTA144V_SER_4
Product data sheet
Rev. 04 â 3 September 2009
© NXP B.V. 2009. All rights reserved.
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