PDTA144V Datasheet, PDF (5/18 Pages) NXP Semiconductors – PNP resistor-equipped transistors; R1 = 47 kW, R2 = 10 kW

NXP Semiconductors
PDTA144V series
PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ
7. Characteristics
Table 8. Characteristics
T_amb = 25 °C unless otherwise specified
Symbol Parameter
Conditions
I_CBO
collector-base cut-off V_CB = −50 V; I_E = 0 A
current
I_CEO
I_EBO
collector-emitter
cut-off current
emitter-base cut-off
current
V_CE = −30 V; I_B = 0 A
V_CE = −30 V; I_B = 0 A;
T_j = 150 °C
V_EB = −5 V; I_C = 0 A
h_FE
V_CEsat
DC current gain
collector-emitter
saturation voltage
V_CE = −5 V; I_C = −5 mA
I_C = −10 mA; I_B = −0.5 mA
V_I(off)
V_I(on)
off-state input voltage V_CE = −5 V; I_C = −100 µA
on-state input voltage V_CE = −300 mV; I_C = −2 mA
R1
bias resistor 1 (input)
R2/R1
bias resistor ratio
C_c
collector capacitance V_CB = −10 V; I_E = i_e = 0 A;
f = 1 MHz
Min
Typ
Max
Unit
-
-
−100
nA
-
-
−1
µA
-
-
−50
µA
-
-
−150
µA
40
-
-
-
-
−150
mV
-
−3.1
−1
V
−6
−3.8
-
V
33
47
61
kΩ
0.17
0.21
0.26
-
-
2
pF
PDTA144V_SER_4
Product data sheet
Rev. 04 — 3 September 2009
© NXP B.V. 2009. All rights reserved.
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