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PBSS4230PANP Datasheet, PDF (6/21 Pages) NXP Semiconductors – 30 V, 2 A NPN/PNP low VCEsat (BISS) transistor
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NXP Semiconductors
PBSS4230PANP
30 V, 2 A NPN/PNP low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W) duty cycle = 1
0.75
102
0.5
0.33
0.2
0.1
10
0.05
0.02 0.01
006aad167
0
1
10-5
10-4
10-3
10-2
10-1
1
FR4 PCB 35 µm, mounting pad for collector 1 cm2
10
102
103
tp (s)
Fig. 3. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
103
006aad168
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02 0.01
0
1
10-5
10-4
10-3
10-2
10-1
1
4-layer PCB 35 µm, standard footprint
10
102
103
tp (s)
Fig. 4. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS4230PANP
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 December 2012
© NXP B.V. 2012. All rights reserved
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