PBSS4230PANP Datasheet, PDF (12/21 Pages) NXP Semiconductors – 30 V, 2 A NPN/PNP low VCEsat (BISS) transistor

NXP Semiconductors
PBSS4230PANP
30 V, 2 A NPN/PNP low VCEsat (BISS) transistor
600
(1)
h_FE
400
(2)
200
(3)
006aad188
0
10^-1
1
10
10²
10³
10⁴
I_C (mA)
V_CE = 2 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig. 10. TR1 (NPN): DC current gain as a function of
collector current; typical values
1.2
006aad190
V_BE
(V)
0.8
(1)
(2)
(3)
0.4
3 _{IB = 15 mA 13.5 12 10.5}
I_C
(A)
2
1
006aad189
9
7.5
6
4.5
3
1.5
0
0
1
2
3
4
5
V_CE (V)
T_amb = 25 °C
Fig. 11. TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
1.2
V_BEsat
(V)
1.0
0.8
0.6
0.4
006aad191
(1)
(2)
(3)
0
10^-1
1
10
10²
10³
10⁴
I_C (mA)
V_CE = 2 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig. 12. TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
0.2
10^-1
1
10
10²
10³
10⁴
I_C (mA)
I_C/I_B = 20
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb= 100 °C
Fig. 13. TR1 (NPN): Base-emitter saturation voltage as a
function of collector current; typical values
PBSS4230PANP
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 December 2012
© NXP B.V. 2012. All rights reserved
12 / 21