PBSS4220V Datasheet, PDF (6/13 Pages) NXP Semiconductors – 20 V, 2 A NPN low VCEsat (BISS) transistor

NXP Semiconductors
PBSS4220V
20 V, 2 A NPN low V_CEsat (BISS) transistor
1000
h_FE
800
(1)
600
(2)
400
(3)
200
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0
10^−1
1
10
10²
10³
10⁴
I_C (mA)
V_CE = 2 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
1
V_CEsat
(V)
10^−1
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(1)
(2)
(3)
10^−2
1.0
V_BE
(V)
0.8
(1)
0.6
(2)
(3)
0.4
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0.2
10^−1
1
10
10²
10³
10⁴
I_C (mA)
V_CE = 5 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 4. Base-emitter voltage as a function of collector
current; typical values
1
V_CEsat
(V)
10^−1
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(1)
(2)
10^−2
(3)
10^−3
10^−1
1
10
10²
10³
10⁴
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 5. Collector-emitter saturation voltage as a
function of collector current; typical values
10^−3
10^−1
1
10
10²
10³
10⁴
I_C (mA)
T_amb = 25 °C
(1) I_C/I_B = 100
(2) I_C/I_B = 50
(3) I_C/I_B = 10
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values
PBSS4220V_2
Product data sheet
Rev. 02 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
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