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PBSS4220V Datasheet, PDF (1/13 Pages) NXP Semiconductors – 20 V, 2 A NPN low VCEsat (BISS) transistor | |||
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PBSS4220V
20 V, 2 A NPN low VCEsat (BISS) transistor
Rev. 02 â 11 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface
Mounted Device (SMD) plastic package.
PNP complement: PBSS5220V.
1.2 Features
 Low collector-emitter saturation voltage VCEsat
 High collector current capability: IC and ICM
 High collector current gain (hFE) at high IC
 High efficiency due to less heat generation
 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
 DC-to-DC conversion
 MOSFET gate driving
 Motor control
 Charging circuits
 Low power switches (e.g. motors, fans)
 Portable applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
[1] Pulse test: tp ⤠300 μs; δ ⤠0.02.
Conditions
open base
tp ⤠300 μs
IC = 1 A;
IB = 100 mA
Min Typ Max
Unit
-
-
20
V
-
-
2
A
-
-
4
A
[1] -
140 175
mΩ
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