PBHV8115T_08 Datasheet, PDF (6/12 Pages) NXP Semiconductors – 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV8115T
150 V, 1 A NPN high-voltage low V_CEsat (BISS) transistor
500
h_FE
400
(1)
300
(2)
200
(3)
100
006aab158
0
10^−1
1
10
10²
10³
10⁴
I_C (mA)
V_CE = 10 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
1.2
V_BE
(V)
0.8
0.4
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(1)
(2)
(3)
2.0
I_C
(A)
1.6
1.2
I_B (mA) = 300
270
240
210
180
150
120
90
60
0.8
30
0.4
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0
0
1
2
3
4
5
V_CE (V)
T_amb = 25 °C
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
1.3
V_BEsat
(V)
0.9
0.5
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(1)
(2)
(3)
0
10^−1
1
10
10²
10³
10⁴
I_C (mA)
0.1
10^−1
1
10
10²
10³
10⁴
I_C (mA)
V_CE = 10 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 5. Base-emitter voltage as a function of collector
current; typical values
I_C/I_B = 5
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 6. Base-emitter saturation voltage as a function
of collector current; typical values
PBHV8115T_2
Product data sheet
Rev. 02 — 9 December 2008
© NXP B.V. 2008. All rights reserved.
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