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| PBHV8115T_08 Datasheet, PDF (5/12 Pages) NXP Semiconductors – 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor | |||
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NXP Semiconductors
PBHV8115T
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
Min
ICBO
collector-base cut-off VCB = 120 V; IE = 0 A
-
current
VCB = 120 V; IE = 0 A;
-
Tj = 150 °C
ICES
collector-emitter cut-off VCE = 120 V; VBE = 0 V
-
current
IEBO
emitter-base cut-off
VEB = 4 V; IC = 0 A
-
current
hFE
VCEsat
VBEsat
DC current gain
collector-emitter
saturation voltage
base-emitter saturation
voltage
VCE = 10 V
IC = 50 mA
IC = 100 mA
IC = 0.5 A
IC = 1 A
IC = 100 mA; IB = 10 mA
IC = 100 mA; IB = 20 mA
IC = 1 A; IB = 200 mA
IC = 1 A; IB = 200 mA
100
100
[1] 50
[1] 10
-
-
[1] -
[1] -
fT
transition frequency VCE = 10 V; IE = 10 mA;
-
f = 100 MHz
Cc
collector capacitance VCB = 20 V; IE = ie = 0 A;
-
f = 1 MHz
Ce
emitter capacitance
VEB = 0.5 V; IC = ic = 0 A;
-
f = 1 MHz
td
delay time
tr
rise time
ton
turn-on time
ts
storage time
tf
fall time
toff
turn-off time
VCC = 6 V; IC = 0.5 A;
-
IBon = 0.1 A; IBoff = â0.1 A
-
-
-
-
-
[1] Pulse test: tp ⤠300 µs; δ ⤠0.02.
Typ Max Unit
-
100 nA
-
10 µA
-
100 nA
-
100 nA
250 -
250 -
160 -
30 -
40 60 mV
33 50 mV
225 350 mV
1.1 1.2 V
30 -
MHz
5.7 -
pF
150 -
pF
7
-
ns
565 -
ns
572 -
ns
1530 -
ns
700 -
ns
2230 -
ns
PBHV8115T_2
Product data sheet
Rev. 02 â 9 December 2008
© NXP B.V. 2008. All rights reserved.
5 of 12
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