BZX384-C10.115 Datasheet, PDF (6/11 Pages) NXP Semiconductors – Voltage regulator diodes

Table 2 Per type BZX384-B/C27 to B/C75
T_j = 25 °C unless otherwise specified.
BZX-
Bxxx
Cxxx
WORKING VOLTAGE V_Z (V)
at I_Ztest = 2 mA
Tol. ±2% (B) Tol. ±5% (C)
DIFFERENTIAL RESISTANCE
r_dif (Ω)
at I_Ztest = 0.5 mA at I_Ztest = 2 mA
TEMPERATURE
COEFFICIENT S_Z (mV/K)
at I_Ztest = 2 mA
(see Figs 4 and 5)
DIODE CAP.
C_d (pF)
at f = 1 MHz;
V_R = 0 V
NON-REPETITIVE
PEAK REVERSE
CURRENT I_ZSM (A)
at t_p = 100 μs;
T_amb = 25 °C
MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX.
MAX.
MAX.
27
26.50 27.50 25.1 28.9 65
300
25
80
21.4 23.4 25.3 50
1.0
30
29.40 30.60 28.0 32.0 70
300
30
80
24.4 26.6 29.4 50
1.0
33
32.30 33.70 31.0 35.0 75
325
35
80
27.4 29.7 33.4 45
0.9
36
35.30 36.70 34.0 38.0 80
350
35
90
30.4 33.0 37.4 45
0.8
39
38.20 39.80 37.0 41.0 80
350
40
130 33.4 36.4 41.2 45
0.7
43
42.10 43.90 40.0 46.0 85
375
45
150 37.6 41.2 46.6 40
0.6
47
46.10 47.90 44.0 50.0 85
375
50
170 42.0 46.1 51.8 40
0.5
51
50.00 52.00 48.0 54.0 90
400
60
180 46.6 51.0 57.2 40
0.4
56
54.90 57.10 52.0 60.0 100
425
70
200 52.2 57.0 63.8 40
0.3
62
60.80 63.20 58.0 66.0 120
450
80
215 58.8 64.4 71.6 35
0.3
68
66.60 69.40 64.0 72.0 150
475
90
240 65.6 71.7 79.8 35
0.25
75
73.50 76.50 70.0 79.0 170
500
95
255 73.4 80.2 88.6 35
0.2