BZX384-C10.115 Datasheet, PDF (5/11 Pages) NXP Semiconductors – Voltage regulator diodes

Table 1 Per type BZX384-B/C2V4 to B/C24
T_j = 25 °C unless otherwise specified.
BZX-
Bxxx
Cxxx
WORKING VOLTAGE V_Z (V)
at I_Ztest = 5 mA
Tol. ±2% (B) Tol. ±5% (C)
DIFFERENTIAL RESISTANCE
r_dif (Ω)
at I_Ztest = 1 mA at I_Ztest = 5 mA
TEMPERATURE
COEFFICIENT S_Z (mV/K)
at I_Ztest = 5 mA
(see Figs 4 and 5)
DIODE CAP.
C_d (pF)
at f = 1 MHz;
V_R = 0 V
NON-REPETITIVE
PEAK REVERSE
CURRENT I_ZSM (A)
at t_p = 100 μs;
T_amb = 25 °C
MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX.
MAX.
MAX.
2V4
2.35 2.45 2.2 2.6 275
600
70
100 −3.5 −1.6 0
450
6.0
2V7
2.65 2.75 2.5 2.9 300
600
75
100 −3.5 −2.0 0
450
6.0
3V0
2.94 3.06 2.8 3.2 325
600
80
95
−3.5 −2.1 0
450
6.0
3V3
3.23 3.37 3.1 3.5 350
600
85
95
−3.5 −2.4 0
450
6.0
3V6
3.53 3.67 3.4 3.8 375
600
85
90
−3.5 −2.4 0
450
6.0
3V9
3.82 3.98 3.7 4.1 400
600
85
90
−3.5 −2.5 0
450
6.0
4V3
4.21 4.39 4.0 4.6 410
600
80
90
−3.5 −2.5 0
450
6.0
4V7
4.61 4.79 4.4 5.0 425
500
50
80
−3.5 −1.4 0.2
300
6.0
5V1
5.00 5.20 4.8 5.4 400
480
40
60
−2.7 −0.8 1.2
300
6.0
5V6
5.49 5.71 5.2 6.0 80
400
15
40
−2.0 1.2
2.5
300
6.0
6V2
6.08 6.32 5.8 6.6 40
150
6
10
0.4
2.3
3.7
200
6.0
6V8
6.66 6.94 6.4 7.2 30
80
6
15
1.2
3.0
4.5
200
6.0
7V5
7.35 7.65 7.0 7.9 30
80
6
15
2.5
4.0
5.3
150
4.0
8V2
8.04 8.36 7.7 8.7 40
80
6
15
3.2
4.6
6.2
150
4.0
9V1
8.92 9.28 8.5 9.6 40
100
6
15
3.8
5.5
7.0
150
3.0
10
9.80 10.20 9.4 10.6 50
150
8
20
4.5
6.4
8.0
90
3.0
11
10.80 11.20 10.4 11.6 50
150
10
20
5.4
7.4
9.0
85
2.5
12
11.80 12.20 11.4 12.7 50
150
10
25
6.0
8.4
10.0 85
2.5
13
12.70 13.30 12.4 14.1 50
170
10
30
7.0
9.4
11.0 80
2.5
15
14.70 15.30 13.8 15.6 50
200
10
30
9.2
11.4 13.0 75
2.0
16
15.70 16.30 15.3 17.1 50
200
10
40
10.4 12.4 14.0 75
1.5
18
17.60 18.40 16.8 19.1 50
225
10
45
12.4 14.4 16.0 70
1.5
20
19.60 20.40 18.8 21.2 60
225
15
55
14.4 16.4 18.0 60
1.5
22
21.60 22.40 20.8 23.3 60
250
20
55
16.4 18.4 20.0 60
1.25
24
23.50 24.50 22.8 25.6 60
250
25
70
18.4 20.4 22.0 55
1.25