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| BUK7905-40ATE Datasheet, PDF (6/15 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET | |||
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NXP Semiconductors
BUK7905-40ATE
N-channel TrenchPLUS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 9
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 9
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 9
IDSS
V(BR)GSS
IGSS
RDSon
drain leakage current VDS = 40 V; VGS = 0 V; Tj = 25 °C
VDS = 40 V; VGS = 0 V; Tj = 175 °C
gate-source breakdown IG = 1 mA; VDS = 0 V; Tj ⤠175 °C;
voltage
Tj ⥠-55 °C
IG = -1 mA; VDS = 0 V; Tj ⤠175 °C;
Tj ⥠-55 °C
gate leakage current VDS = 0 V; VGS = 10 V; Tj = 25 °C
VDS = 0 V; VGS = -10 V; Tj = 25 °C
VDS = 0 V; VGS = 10 V; Tj = 175 °C
VDS = 0 V; VGS = -10 V; Tj = 175 °C
drain-source on-state VGS = 10 V; ID = 50 A; Tj = 25 °C;
resistance
see Figure 7; see Figure 8
VGS = 10 V; ID = 50 A; Tj = 175 °C;
see Figure 7; see Figure 8
VF(TSD)
temperature sense
IF = 250 µA; Tj = 25 °C
diode forward voltage
SF(TSD)
temperature sense
diode temperature
coefficient
IF = 250 µA; Tj ⥠-55 °C; Tj ⤠175 °C
VF(TSD)hys
temperature sense
diode forward voltage
hysteresis
IF ⤠250 µA; IF ⥠125 µA; Tj = 25 °C
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
ID = 25 A; VDS = 32 V; VGS = 10 V;
Tj = 25 °C; see Figure 14
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 12
Min Typ Max Unit
40
-
-
V
36
-
-
V
2
3
4
V
1
-
-
V
-
-
4.4 V
-
0.1 10
µA
-
-
250 µA
20
22
-
V
20
22
-
V
-
22
1000 nA
-
22
1000 nA
-
-
10
µA
-
-
10
µA
-
4.5 5
mâ¦
-
-
9.5 mâ¦
648 658 668 mV
-1.4 -1.54 -1.68 mV/K
25
32
50
mV
-
118 -
nC
-
16
-
nC
-
57
-
nC
-
4500 -
pF
-
1500 -
pF
-
960 -
pF
BUK7905-40ATE_2
Product data sheet
Rev. 02 â 10 February 2009
© NXP B.V. 2009. All rights reserved.
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