BUK7905-40ATE Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

BUK7905-40ATE
N-channel TrenchPLUS standard level FET
Rev. 02 — 10 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
temperature sensing and ElectroStatic Discharge (ESD) protection. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
1.2 Features and benefits
„ Allows responsive temperature
monitoring due to integrated
temperature sensor
„ Electrostatically robust due to
integrated protection diodes
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Suitable for standard level gate drive
sources
1.3 Applications
„ Electrical Power Assisted Steering
(EPAS)
„ Variable Valve Timing for engines
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 50 A;
resistance
T_j = 25 °C; see Figure 7; see
Figure 8
S_F(TSD)
temperature sense
diode temperature
coefficient
I_F = 250 µA; T_j ≥ -55 °C;
T_j ≤ 175 °C
V_F(TSD)
temperature sense
diode forward
voltage
I_F = 250 µA; T_j = 25 °C
V_F(TSD)hys temperature sense
diode forward
voltage hysteresis
I_F ≤ 250 µA; T_j = 25 °C;
I_F ≥ 125 µA
Min Typ Max Unit
-
-
40 V
-
4.5 5
mΩ
-1.4 -1.54 -1.68 mV/K
648 658 668 mV
25 32 50 mV