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| BTA208S-800B_11 Datasheet, PDF (6/14 Pages) NXP Semiconductors – 3Q Hi-Com Triac Triggering in three quadrants only | |||
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NXP Semiconductors
BTA208S-800B
3Q Hi-com Triac
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
IGT
gate trigger current
IL
latching current
IH
holding current
VT
on-state voltage
VGT
gate trigger voltage
ID
off-state current
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt
rate of change of
commutating current
tgt
gate-controlled turn-on
time
Conditions
VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C;
see Figure 7
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C;
see Figure 7
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C;
see Figure 7
VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C;
see Figure 8
VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C;
see Figure 8
VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C;
see Figure 8
VD = 12 V; Tj = 25 °C; see Figure 9
IT = 10 A; Tj = 25 °C; see Figure 10
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
see Figure 11
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
see Figure 11
VD = 800 V; Tj = 125 °C
VDM = 535 V; Tj = 125 °C; exponential
waveform; gate open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A;
dVcom/dt = 20 V/µs; gate open circuit;
snubberless condition; see Figure 12
ITM = 12 A; VD = 800 V; IG = 0.1 A;
dIG/dt = 5 A/µs
Min Typ Max Unit
2
18
50
mA
2
21
50
mA
2
34
50
mA
-
31
60
mA
-
34
90
mA
-
30
60
mA
-
31
60
mA
-
1.3 1.65 V
-
0.7 1.5 V
0.25 0.4 -
V
-
0.1 0.5 mA
1000 4000 -
-
14
-
V/µs
A/ms
-
2
-
µs
BTA208S-800B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 â 14 April 2011
© NXP B.V. 2011. All rights reserved.
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