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| BTA208S-600F Datasheet, PDF (6/13 Pages) NXP Semiconductors – 3Q Hi-Com Triac Triggering in three quadrants only | |||
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NXP Semiconductors
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
IGT
gate trigger current
IL
latching current
IH
holding current
VT
on-state voltage
VGT
gate trigger voltage
ID
off-state current
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt
rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; see Figure 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; see Figure 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; see Figure 7
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; see Figure 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; see Figure 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; see Figure 8
VD = 12 V; Tj = 25 °C; see Figure 9
IT = 10 A; Tj = 25 °C; see Figure 10
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
see Figure 11
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
see Figure 11
VD = 600 V; Tj = 125 °C
VDM = 402 V; Tj = 110 °C; exponential
waveform; gate open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A;
dVcom/dt = 10 V/µs; gate open circuit;
see Figure 12
BTA208S-600F
3Q Hi-Com Triac
Min Typ Max Unit
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.25 -
-
-
25 mA
25 mA
25 mA
30 mA
40 mA
40 mA
30 mA
1.65 V
1.5 V
-
V
0.5 mA
70 -
-
V/µs
14 -
-
A/ms
BTA208S-600F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 â 13 April 2011
© NXP B.V. 2011. All rights reserved.
6 of 13
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