BTA208S-600F Datasheet, PDF (3/13 Pages) NXP Semiconductors – 3Q Hi-Com Triac Triggering in three quadrants only

NXP Semiconductors
BTA208S-600F
3Q Hi-Com Triac
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DRM
I_T(RMS)
repetitive peak off-state voltage
RMS on-state current
full sine wave; T_mb ≤ 102 °C; see Figure
1; see Figure 2; see Figure 3
I_TSM
I²t
dI_T/dt
I_GM
V_GM
P_GM
P_G(AV)
T_stg
T_j
non-repetitive peak on-state
current
I²t for fusing
rate of rise of on-state current
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
full sine wave; T_j(init) = 25 °C;
t_p = 20 ms; see Figure 4; see Figure 5
full sine wave; T_j(init) = 25 °C;
t_p = 16.7 ms
t_p = 10 ms; sine-wave pulse
I_T = 12 A; I_G = 0.2 A; dI_G/dt = 0.2 A/µs
over any 20 ms period
10
I_T(RMS)
(A)
8
6
4
2
0
−50
0
003aaf581
102 °C
50
100
150
T_mb (°C)
25
I_T(RMS)
(A)
20
15
10
5
0
10^−2
10^−1
Min Max Unit
-
600 V
-
8
A
-
65 A
-
72 A
-
21
A²s
-
100 A/µs
-
2
A
-
5
V
-
5
W
-
0.5 W
-40 150 °C
-
125 °C
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1
10
surge duration (s)
Fig 1. RMS on-state current as a function of heatsink Fig 2. RMS on-state current as a function of surge
temperature; maximum values
duration; maximum value
BTA208S-600F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 13 April 2011
© NXP B.V. 2011. All rights reserved.
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