BTA204S Datasheet, PDF (6/13 Pages) NXP Semiconductors – Three-quadrant triacs high commutation

Philips Semiconductors
BTA204S series B and C
Three-quadrant triacs high communication
6. Static characteristics
Table 5: Static characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
BTA204S-600B
BTA204S-800B
BTA204S-600C Unit
BTA204S-800C
Min Typ Max Min Typ Max
I_GT
gate trigger
current
V_D = 12 V; I_T = 0.1 A see Figure 8
[1]
T2+ G+
-
50 -
-
35 mA
T2+ G−
-
-
50 -
-
35 mA
T2− G−
-
-
50 -
-
35 mA
I_L
latching current V_D = 12 V; I_GT = 0.1 A; see Figure 10
T2+ G+
-
-
30 -
-
20 mA
T2+ G−
-
-
45 -
-
30 mA
T2− G−
-
-
30 -
-
20 mA
I_H
holding current V_D = 12 V; I_GT = 0.1 A; see Figure 11
-
-
30 -
-
20 mA
V_T
on-state voltage I_T = 5 A; see Figure 9
-
1.4 1.7 -
1.4 1.7 V
V_GT
gate trigger
voltage
V_D = 12 V; I_T = 0.1 A; see Figure 7
V_D = 400 V; I_T = 0.1 A; T_j = 125 °C
I_D
off-state leakage V_D = V_DRM(max); T_j = 125 °C
current
-
0.7 1.5 -
0.7 1.5 V
0.25 0.4 -
0.25 0.4 -
V
-
0.1 0.5 -
0.1 0.5 mA
[1] Device does not trigger in the T2− G+ quadrant.
1.6
V_GT (T_j)
V_GT (25°C)
1.2
0.8
001aac334
3
I_GT (T_j)
I_GT (25°C) (1)
2
(2)
(3)
1
001aac677
0.4
−50
0
50
100
150
T_j (°C)
0
−50
0
50
100
150
T_j (°C)
Fig 7. Normalized gate trigger voltage as a function of
junction temperature
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 8. Normalized gate trigger current as a function of
junction temperature
9397 750 14862
Product data sheet
Rev. 03 — 24 May 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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