BFT25A_04 Datasheet, PDF (6/14 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

Philips Semiconductors
BFT25A
NPN 5 GHz wideband transistor
4
F
(dB)
3
2
mcd145
f=
2 GHz
1 GHz
500 MHz
4
F
(dB)
3
2
mcd146
I_C =
2 mA
1 mA
0.5 mA
1
1
0
10^−1
1
10
I_C (mA)
0
10²
10³
10⁴
f (MHz)
V_CE = 1 V.
Fig 9. Minimum noise figure as a function of collector
current.
V_CE = 1 V.
Fig 10. Minimum noise figure as a function of
frequency.
0.2
+j
0
−j
0.2
1
0.5
2
pot. unst.
region
6 dB
4 dB
2.5 dB
5
stability
circle
10
0.2
0.5
1
2
5 10
∞ _Γopt
MSG
F_min = 1.9 dB
14.5 dB
10
13 dB
5
11 dB
0.5
1
See Table 8;
Z_o = 50 Ω.
Average gain parameter: MSG = 14.5 dB.
Fig 11. Noise circle figure.
2
mcd108
9397 750 13399
Product data sheet
Rev. 04 — 6 July 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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