BFT25A_04 Datasheet, PDF (1/14 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

BFT25A
NPN 5 GHz wideband transistor
Rev. 04 — 6 July 2004
Product data sheet
1. Product profile
1.1 General description
The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power
amplifiers, such as pocket telephones and paging systems with signal frequencies up
to 2 GHz.
The transistor is encapsulated in a 3-pin plastic SOT23 envelope.
1.2 Features
s Low current consumption (100 µA to 1 mA)
s Low noise figure
s Gold metallization ensures excellent reliability.
1.3 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
V_CBO
collector-base
voltage
open emitter
-
-
8
V
V_CEO
collector-emitter open base
voltage
-
-
5
V
I_C
DC collector
current
-
-
6.5 mA
P_tot
total power
up to T_s = 165 °C
[1] _-
-
32
mW
dissipation
h_FE
DC current gain I_C = 0.5 mA; V_CE = 1 V
50
80
200
f_T
transition
I_C = 1 mA; V_CE = 1 V;
3.5 5
-
GHz
frequency
T_amb = 25 °C;
f = 500 MHz
G_UM
maximum
I_C = 0.5 mA; V_CE = 1 V;
-
15
-
dB
unilateral power T_amb = 25 °C;
gain
f = 1 GHz
F
noise figure
Γ = Γ_opt; I_C = 0.5 mA;
-
1.8 -
dB
V_CE = 1 V;
T_amb = 25 °C; f = 1 GHz
Γ = Γ_opt; I_C = 1 mA;
-
2
-
dB
V_CE = 1 V;
T_amb = 25 °C; f = 1 GHz
[1] T_s is the temperature at the soldering point of the collector tab.