BCP68 Datasheet, PDF (6/12 Pages) NXP Semiconductors – NPN medium power transistor

NXP Semiconductors
NPN medium power transistor;
20 V, 1 A
Product data sheet
BCP68
handbook, halfpage
32 mm
30 mm
40 mm
1.3 mm
20 mm
0.5 mm
3.96 mm
2.6 mm
5 mm
1.6 mm
MDB845
Dimensions in mm.
Fig.3 6 cm² collector mounting pad.
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
I_EBO
h_FE
V_CEsat
V_BE
C_c
f_T
collector-base cut-off current
emitter-base cut-off current
DC current gain
V_CB = 25 V; I_E = 0
V_CB = 25 V; I_E = 0; T_j = 150 °C
V_EB = 5 V; I_C = 0
BCP68
V_CE = 10 V; I_C = 5 mA
V_CE = 1 V; I_C = 500 mA
V_CE = 1 V; I_C = 1 A
BCP68-25
V_CE = 1 V; I_C = 500 mA
collector-emitter saturation voltage I_C = 1 A; I_B = 100 mA
base-emitter voltage
V_CE = 10 V; I_C = 5 mA
V_CE = 1 V; I_C = 1 A
collector capacitance
V_CB = 10 V; I_E = i_e = 0; f = 1 MHz
transition frequency
V_CE = 5 V; I_C = 50 mA; f = 100 MHz
MIN. TYP. MAX. UNIT
−
−
100 nA
−
−
10 μA
−
−
100 nA
50 −
−
85 −
375
60 −
−
160 −
375
−
−
500 mV
−
−
700 mV
−
−
1
V
−
22 −
pF
40 170 −
MHz
2003 Nov 25
6