BCP68 Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN medium power transistor

NXP Semiconductors
NPN medium power transistor;
20 V, 1 A
Product data sheet
BCP68
handbook¹, ^.h⁶alfpage
Ptot
(1)
(W)
1.2
(2)
0.8
(3)
0.4
MDB846
0
−60
0
60
120
180
Tamb (°C)
(1) 6 cm² collector mounting pad.
(2) 1 cm² collector mounting pad.
(3) Standard PCB footprint.
Fig.1 Power derating curve.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
R_th(j-a)
thermal resistance from junction to ambient
T_amb ≤ 25 °C; notes 1 and 3 200
K/W
T_amb ≤ 25 °C; notes 1 and 4 125
K/W
T_amb ≤ 25 °C; notes 1 and 4 89
K/W
R_th(j-s)
thermal resistance from junction to solder point T_amb ≤ 25 °C
15
K/W
Notes
1. See SOT223 (SC-73) standard mounting conditions.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT223.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; 1 cm² collector mounting pad.
4. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; 6 cm² collector mounting pad.
2003 Nov 25
4