BCM847BV Datasheet, PDF (6/15 Pages) NXP Semiconductors – NPN/NPN matched double transistors

NXP Semiconductors
BCM847BV/BS/DS
NPN/NPN matched double transistors
0.20 _{IB (mA) = 4.50}
I_C
4.05
(A)
3.60
3.15
0.16
0.12
0.08
0.04
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2.70
2.25
1.80
1.35
0.90
0.45
600
h_FE
400
(1)
(2)
200
(3)
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0
0
2
4
6
8
10
V_CE (V)
T_amb = 25 °C
Fig 1. Collector current as a function of
collector-emitter voltage; typical values
0
10^−2
10^−1
1
10
10²
10³
I_C (mA)
V_CE = 5 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 2. DC current gain as a function of collector
current; typical values
1.3
V_BEsat
(V)
1.1
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0.9
(1)
0.7
(2)
(3)
0.5
0.3
0.1
10^−1
1
10
10²
10³
I_C (mA)
I_C/I_B = 20
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 3. Base-emitter saturation voltage as a function
of collector current; typical values
10
V_CEsat
(V)
1
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10^−1
(1)
(2)
(3)
10^−2
10^−1
1
10
10²
10³
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 4. Collector-emitter saturation voltage as a
function of collector current; typical values
BCM847BV_BS_DS_6
Product data sheet
Rev. 06 — 28 August 2009
© NXP B.V. 2009. All rights reserved.
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