74HC2G00 Datasheet, PDF (6/13 Pages) NXP Semiconductors – Dual 2-input NAND gate

NXP Semiconductors
74HC2G00; 74HCT2G00
Dual 2-input NAND gate
Table 8. Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); all typical values are measured at T_amb = 25 °C; for test circuit see Figure 7.
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C Unit
Min Typ Max Min
Max
74HCT2G00
t_pd
propagation delay nA and nB to nY; see Figure 6
[1]
V_CC = 4.5 V
t_t
transition time
V_CC = 4.5 V; see Figure 6
C_PD
power dissipation V_I = GND to V_CC − 1.5 V
capacitance
-
12
24
-
[2]
-
6
19
-
[3]
-
10
-
-
29 ns
22 ns
-
pF
[1] t_pd is the same as t_PLH and t_PHL.
[2] t_t is the same as t_TLH and t_THL.
[3] C_PD is used to determine the dynamic power dissipation (P_D in µW).
P_D = C_PD × V_CC2 × f_i × N + Σ(C_L × V_CC2 × f_o) where:
f_i = input frequency in MHz;
f_o = output frequency in MHz;
C_L = output load capacitance in pF;
V_CC = supply voltage in V;
N = number of inputs switching;
Σ(C_L × V_CC2 × f_o) = sum of outputs.
12. Waveforms
V_I
nA, nB input
GND
V_OH
nY output
V_OL
V_M
t_PHL
V_M
t_THL
V_M
V_M
10%
t_PLH
90%
t_TLH
001aae759
Fig 6.
Measurement points are given in Table 9.
V_OL and V_OH are typical output voltage levels that occur with the output load.
Propagation delay data input (nA, nB) to data output (nY) and transition time output (nY)
Table 9. Measurement points
Type
74HC2G00
74HCT2G00
Input
V_M
0.5 × V_CC
1.3 V
Output
V_M
0.5 × V_CC
1.3 V
74HC_HCT2G00_4
Product data sheet
Rev. 04 — 3 July 2008
© NXP B.V. 2008. All rights reserved.
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