74HC2G00 Datasheet, PDF (5/13 Pages) NXP Semiconductors – Dual 2-input NAND gate

NXP Semiconductors
74HC2G00; 74HCT2G00
Dual 2-input NAND gate
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T_amb = 25 °C.
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C
Min Typ Max Min
Max
74HCT2G00
V_IH
HIGH-level input
V_CC = 4.5 V to 5.5 V
voltage
2.0 1.6
-
2.0
-
V_IL
LOW-level input
V_CC = 4.5 V to 5.5 V
voltage
-
1.2 0.8
-
0.8
V_OH
V_OL
I_I
I_CC
∆I_CC
C_I
HIGH-level output
voltage
V_I = V_IH or V_IL
I_O = −20 µA; V_CC = 4.5 V
4.4 4.5
-
4.4
I_O = −4.0 mA; V_CC = 4.5 V
4.13 4.32 -
3.7
LOW-level output
voltage
V_I = V_IH or V_IL
I_O = 20 µA; V_CC = 4.5 V
-
0 0.1
-
I_O = 4.0 mA; V_CC = 4.5 V
- 0.15 0.33
-
input leakage current V_I = V_CC or GND; V_CC = 5.5 V
-
- ±1.0
-
supply current
V_I = V_CC or GND; I_O = 0 A;
V_CC = 5.5 V
-
-
10
-
additional supply
per input; V_CC = 4.5 V to 5.5 V;
-
- 375
-
current
V_I = V_CC − 2.1 V; I_O = 0 A
input capacitance
-
1.5
-
-
-
-
0.1
0.4
±1.0
20
410
-
Unit
V
V
V
V
V
V
µA
µA
µA
pF
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); all typical values are measured at T_amb = 25 °C; for test circuit see Figure 7.
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C Unit
Min Typ Max Min
Max
74HC2G00
t_pd
propagation delay nA and nB to nY; see Figure 6
[1]
V_CC = 2.0 V
-
25
95
-
110 ns
V_CC = 4.5 V
-
9
19
-
22 ns
V_CC = 6.0 V
-
7
16
-
20 ns
t_t
transition time see Figure 6
[2]
V_CC = 2.0 V
-
18
95
-
125 ns
V_CC = 4.5 V
-
6
19
-
25 ns
V_CC = 6.0 V
-
5
16
-
20 ns
C_PD
power dissipation V_I = GND to V_CC
capacitance
[3]
-
10
-
-
-
pF
74HC_HCT2G00_4
Product data sheet
Rev. 04 — 3 July 2008
© NXP B.V. 2008. All rights reserved.
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