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74HC1GU04 Datasheet, PDF (6/12 Pages) NXP Semiconductors – Inverter
NXP Semiconductors
74HC1GU04
Inverter
mna049
20
6
ICC
(mA)
VO
Rbias = 560 kΩ
(V)
VCC
10
3
0.47 µF input
output 100 µF
VI
(f = 1 kHz)
A IO
GND
mna050
0
0
0
3
VI (V)
6
Fig 9. VCC = 6.0 V; IO = 0 A
Fig 10. Test set-up for measuring forward transfer
conductance gfs = ∆IO/∆VI at VO is constant
14. Application information
Some applications are:
• Linear amplifier (see Figure 11)
• In crystal oscillator design (see Figure 12)
Remark: All values given are typical unless otherwise specified
R2
1 µF R1
VCC
U04
ZL
mna052
Maximum Vo(p-p) = VCC − 1.5 V centered at
0.5 × VCC.
Gv = –-1----+------RR--------12---G--(--1-o--l-+-----G-----o---l-)-
Gol = open loop gain
Gv = voltage gain
R1 ≥ 3 kΩ, R2 ≤ 1 MΩ
ZL > 10 kΩ; Gol = 20 (typ.)
Typical unity gain bandwidth product is 5 MHz.
Fig 11. Used as a linear amplifier
R1
R2
U04
C1
C2
out
mna053
C1 = 47 pF (typ.)
C2 = 22 pF (typ.)
R1 = 1 MΩ to 10 MΩ (typ.)
R2 optimum value depends on the frequency and
required stability against changes in VCC or average
minimum ICC (ICC is typically 2 mA at VCC = 3 V and
f = 1 MHz).
Fig 12. Crystal oscillator configuration
74HC1GU04_5
Product data sheet
Rev. 05 — 10 July 2007
© NXP B.V. 2007. All rights reserved.
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