74HC1GU04 Datasheet, PDF (4/12 Pages) NXP Semiconductors – Inverter

NXP Semiconductors
74HC1GU04
Inverter
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T_amb = 25 °C.
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C
Min Typ Max Min
Max
V_OH
HIGH-level output
V_I = V_IH or V_IL
voltage
I_O = −20 µA; V_CC = 2.0 V
1.8 2.0
-
1.8
-
I_O = −20 µA; V_CC = 4.5 V
4.0 4.5
-
4.0
-
I_O = −20 µA; V_CC = 6.0 V
5.5 6.0
-
5.5
-
I_O = −2.0 mA; V_CC = 4.5 V
4.13 4.32 -
3.7
-
I_O = −2.6 mA; V_CC = 6.0 V
5.63 5.81 -
5.2
-
V_OL
LOW-level output
V_I = V_IH or V_IL
voltage
I_O = 20 µA; V_CC = 2.0 V
I_O = 20 µA; V_CC = 4.5 V
I_O = 20 µA; V_CC = 6.0 V
-
0 0.2
-
0.2
-
0 0.5
-
0.5
-
0 0.5
-
0.5
I_O = 2.0 mA; V_CC = 4.5 V
- 0.15 0.33
-
0.4
I_O = 2.6 mA; V_CC = 6.0 V
- 0.16 0.33
-
0.4
I_I
input leakage current V_I = V_CC or GND; V_CC = 6.0 V
-
-
1.0
-
1.0
I_CC
supply current
V_I = V_CC or GND; I_O = 0 A;
-
-
10
-
20
V_CC = 6.0 V
C_I
input capacitance
-
5
-
-
-
Unit
V
V
V
V
V
V
V
V
V
V
µA
µA
pF
11. Dynamic characteristics
Table 8. Dynamic characteristics
GND = 0 V; t_r = t_f = 6.0 ns; For test circuit see Figure 6. All typical values are measured at T_amb = 25 °C.
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C Unit
Min Typ Max Min
Max
t_pd
propagation delay A to Y; see Figure 5
[1]
V_CC = 2.0 V; C_L = 50 pF
-
10
90
-
105 ns
V_CC = 4.5 V; C_L = 50 pF
-
7
18
-
21 ns
V_CC = 6.0 V; C_L = 50 pF
-
6
15
-
18 ns
V_CC = 5.0 V; C_L = 15 pF
C_PD
power dissipation V_I = GND to V_CC
capacitance
-
5
-
-
[2]
-
14
-
-
-
ns
-
pF
[1] t_pd is the same as t_PLH and t_PHL.
[2] C_PD is used to determine the dynamic power dissipation P_D (µW).
P_D = C_PD × V_CC2 × f_i + ∑ (C_L × V_CC2 × f_o) where:
f_i = input frequency in MHz;
f_o = output frequency in MHz;
C_L = output load capacitance in pF;
V_CC = supply voltage in Volts.
74HC1GU04_5
Product data sheet
Rev. 05 — 10 July 2007
© NXP B.V. 2007. All rights reserved.
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