PZUXBL Datasheet, PDF (5/13 Pages) NXP Semiconductors – Single Zener diodes

NXP Semiconductors
PZUxBL series
Single Zener diodes
Table 8. Characteristics per type; PZU2.4BL to PZU5.6B2L …continued
T_j = 25 °C unless otherwise specified.
PZUxxx Sel Working
Differential resistance Reverse
Temperature
voltage
V_Z (V)
r_dif (Ω)
current
I_R (µA)
coefficient
S_Z (mV/K)
I_Z = 5 mA I_Z = 0.5 mA I_Z = 5 mA
I_Z = 5 mA
Min Max Max
Max
Max V_R (V) Typ
4.7
B
4.42 4.90 800
80
2
1
−1.4
B2 4.55 4.75
5.1
B
4.84 5.37 250
60
2
1.5 0.3
B2 4.98 5.20
5.6
B
5.31 5.92 100
40
1
2.5 1.9
B2 5.49 5.73
Diode
capacitance
C_d (pF)^[1]
Non-repetitive
peak reverse
current
I_ZSM (A)^[2]
Max
Max
325
8
300
5.5
275
5.5
[1] f = 1 MHz; V_R = 0 V
[2] t_p = 100 µs; square wave; T_j = 25 °C prior to surge
Table 9. Characteristics per type; PZU6.2BL to PZU36BL
T_j = 25 °C unless otherwise specified.
PZUxxx Sel
Working
voltage
V_Z (V)
Differential resistance Reverse
r_dif (Ω)
current
I_R (nA)
I_Z = 5 mA I_Z = 0.5 mA I_Z = 5 mA
Min Max Max
Max
Max V_R (V)
6.2
B
5.86 6.53 80
30
500 3
B2 6.06 6.33
6.8
B
6.47 7.14 60
20
500 3.5
B2 6.65 6.93
7.5
B
7.06 7.84 60
10
500 4
B2 7.28 7.60
8.2
B
7.76 8.64 60
10
500 5
B2 8.02 8.36
9.1
B
8.56 9.55 60
10
500 6
B2 8.85 9.23
10
B
9.45 10.55 60
10
100 7
B2 9.77 10.21
11
B
10.44 11.56 60
10
100 8
B2 10.76 11.22
12
B
11.42 12.60 80
10
100 9
B2 11.74 12.24
13
B
12.47 13.96 80
10
100 10
B2 12.91 13.49
14
B2 13.70 14.30 80
10
100 11
Temperature
coefficient
S_Z (mV/K)
I_Z = 5 mA
Typ
2.7
3.4
4.0
4.6
5.5
6.4
7.4
8.4
9.4
10.4
Diode
capacitance
C_d (pF)^[1]
Non-repetitive
peak reverse
current
I_ZSM (A)^[2]
Max
Max
250
5.5
215
5.5
170
3.5
150
3.5
120
3.5
110
3.5
108
3
105
3
103
2.5
101
2
PZUXBL_SER_1
Product data sheet
Rev. 01 — 6 May 2008
© NXP B.V. 2008. All rights reserved.
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