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PHP27NQ11T Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
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NXP Semiconductors
PHP27NQ11T
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 7 and 8
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 7 and 8
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 7 and 8
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 14 A; Tj = 175 °C;
see Figure 9 and 10
VGS = 10 V; ID = 14 A; Tj = 25 °C;
see Figure 9 and 10
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
ID = 27 A; VDS = 80 V; VGS = 10 V;
Tj = 25 °C; see Figure 11
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 12
VDS = 50 V; RL = 1.8 Ω; VGS = 10 V;
RG(ext) = 5.6 Ω; Tj = 25 °C
VSD
source-drain voltage
IS = 14 A; VGS = 0 V; Tj = 25 °C;
see Figure 13
trr
reverse recovery time
IS = 14 A; dIS/dt = -100 A/µs;
Qr
recovered charge
VGS = 0 V; VDS = 25 V; Tj = 25 °C
Min Typ Max Unit
99
-
110 -
1
-
2
3
-
-
-
-
-
-
-
10
-
10
-
-
-
40
-
V
-
V
-
V
4
V
4.4 V
10
µA
500 µA
100 nA
100 nA
135 mΩ
50
mΩ
-
30
-
nC
-
6
-
nC
-
12
-
nC
-
1240 -
pF
-
170 -
pF
-
100 -
pF
-
12
-
ns
-
43
-
ns
-
32
-
ns
-
24
-
ns
-
0.9 1.5 V
-
60
-
ns
-
160 -
nC
PHP27NQ11T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 4 March 2010
© NXP B.V. 2010. All rights reserved.
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