English
Language : 

PHP27NQ11T Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
NXP Semiconductors
PHP27NQ11T
N-channel TrenchMOS standard level FET
120
Ider
(%)
80
03aa24
120
Pder
(%)
80
03aa16
40
40
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
103
ID
Limit RDSon = VDS /ID
(A)
102
10
DC
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
03ao61
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
10−1
1
10
102
103
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PHP27NQ11T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 4 March 2010
© NXP B.V. 2010. All rights reserved.
3 of 13