PDTC143X Datasheet, PDF (5/12 Pages) NXP Semiconductors – NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 10 kW

NXP Semiconductors
PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
6. Thermal characteristics
Table 7.
Symbol
R_th(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from in free air
junction to ambient
SOT416
SOT490
SOT346
SOT883
SOT54
SOT23
SOT323
Min Typ
[1] _-
-
[1][2] _-
-
[1] _-
-
[2][3] _-
-
[1] _-
-
[1] _-
-
[1] _-
-
Max
833
500
500
500
250
500
625
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
7. Characteristics
Unit
K/W
K/W
K/W
K/W
K/W
K/W
K/W
Table 8. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
I_CBO
collector-base cut-off V_CB = 50 V; I_E = 0 A
current
I_CEO
I_EBO
collector-emitter
cut-off current
emitter-base cut-off
current
V_CE = 30 V; I_B = 0 A
V_CE = 30 V; I_B = 0 A;
T_j = 150 °C
V_EB = 5 V; I_C = 0 A
h_FE
V_CEsat
DC current gain
collector-emitter
saturation voltage
V_CE = 5 V; I_C = 10 mA
I_C = 10 mA; I_B = 0.5 mA
V_I(off)
V_I(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
V_CE = 5 V; I_C = 100 μA
V_CE = 300 mV; I_C = 20 mA
R2/R1 bias resistor ratio
C_c
collector capacitance V_CB = 10 V; I_E = i_e = 0 A;
f = 1 MHz
Min Typ Max Unit
-
-
100 nA
-
-
1
μA
-
-
50 μA
-
-
600 μA
50 -
-
-
-
100 mV
-
-
0.3 V
2.5 -
-
V
3.3 4.7 6.1 kΩ
1.7 2.1 2.6
-
-
2.5 pF
PDTC143X_SER_10
Product data sheet
Rev. 10 — 16 November 2009
© NXP B.V. 2009. All rights reserved.
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