PDTC143X Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 10 kW

NXP Semiconductors
PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_CBO
collector-base voltage
open emitter
-
V_CEO
collector-emitter voltage open base
-
V_EBO
emitter-base voltage
open collector
-
V_I
input voltage
positive
-
negative
-
I_O
output current
-
I_CM
peak collector current
single pulse;
-
t_p ≤ 1 ms
P_tot
total power dissipation
T_amb ≤ 25 °C
SOT416
[1] _-
SOT490
[1][2] _-
SOT346
[1] _-
SOT883
[2][3] _-
SOT54
[1] _-
SOT23
[1] _-
SOT323
[1] _-
T_stg
storage temperature
−65
T_j
junction temperature
-
T_amb
ambient temperature
−65
Max
50
50
7
+20
−7
100
100
150
250
250
250
500
250
200
+150
150
+150
Unit
V
V
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
mW
°C
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
PDTC143X_SER_10
Product data sheet
Rev. 10 — 16 November 2009
© NXP B.V. 2009. All rights reserved.
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