PDTC123E Datasheet, PDF (5/14 Pages) NXP Semiconductors – NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm

NXP Semiconductors
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Product data sheet
PDTC123E series
THERMAL CHARACTERISTICS
SYMBOL
R_th(j-a)
PARAMETER
thermal resistance from junction to ambient
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
CONDITIONS
in free air
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
VALUE
250
500
500
625
833
500
500
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
I_CEO
I_EBO
h_FE
V_CEsat
V_i(off)
V_i(on)
R1
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
V_CB = 50 V; I_E = 0 A
V_CE = 30 V; I_B = 0 A
V_CE = 30 V; I_B = 0 A; T_j = 150 °C
V_EB = 5 V; I_C = 0 A
V_CE = 5 V; I_C = 20 mA
I_C = 10 mA; I_B = 0.5 mA
I_C = 1 mA; V_CE = 5 V
I_C = 20 mA; V_CE = 0.3 V
R-----2--
R1
resistor ratio
C_c
collector capacitance
V_CB = 10 V; I_E = i_e = 0 A;
f = 1 MHz
MIN.
−
−
−
−
30
−
−
2
1.54
TYP.
−
−
−
−
−
−
1.2
1.6
2.2
MAX. UNIT
100 nA
1
μA
50
μA
2
mA
−
150 mV
0.5 V
−
V
2.86 kΩ
0.8 1
1.2
−
−
2.5 pF
2004 Aug 06
5