PDTC123E Datasheet, PDF (2/14 Pages) NXP Semiconductors – NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm

NXP Semiconductors
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Product data sheet
PDTC123E series
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_CEO
collector-emitter
voltage
I_O
output current (DC)
R1
bias resistor
R2
bias resistor
TYP.
−
−
2.2
2.2
MAX. UNIT
50 V
100 mA
−
kΩ
−
kΩ
DESCRIPTION
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE NUMBER
PDTC123EE
PDTC123EEF
PDTC123EK
PDTC123EM
PDTC123ES
PDTC123ET
PDTC123EU
PACKAGE
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
EIAJ
SC-75
SC-89
SC-59
SC-101
SC-43
−
SC-70
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE PNP COMPLEMENT
5A
6A
48
G1
TC123E
*26⁽¹⁾
*48⁽¹⁾
PDTA123EE
PDTA123EEF
PDTA123EK
PDTA123EM
PDTA123ES
PDTA123ET
PDTA123EU
2004 Aug 06
2