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PDTC114E Datasheet, PDF (5/14 Pages) NXP Semiconductors – NPN resistor-equipped transistor; R1 = 10 kohm, R2 = 10 kohm
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NXP Semiconductors
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
Product data sheet
PDTC114E series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
VCB = 50 V; IE = 0
VCE = 30 V; IB = 0
VCE = 30 V; IB = 0; Tj = 150 °C
VEB = 5 V; IC = 0
VCE = 5 V; IC = 5 mA
IC = 10 mA; IB = 0.5 mA
IC = 100 μA; VCE = 5 V
IC = 10 mA; VCE = 0.3 V
R-----2--
R1
resistor ratio
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
MIN.
−
−
−
−
30
−
−
2.5
7
TYP.
−
−
−
−
−
−
1.1
1.8
10
MAX. UNIT
100 nA
1
μA
50
μA
400 μA
−
150 mV
0.8 V
−
V
13
kΩ
0.8 1
1.2
−
−
2.5 pF
2004 Aug 05
5
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