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PDTC114E Datasheet, PDF (2/14 Pages) NXP Semiconductors – NPN resistor-equipped transistor; R1 = 10 kohm, R2 = 10 kohm | |||
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NXP Semiconductors
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
Product data sheet
PDTC114E series
FEATURES
⢠Built-in bias resistors
⢠Simplified circuit design
⢠Reduction of component count
⢠Reduced pick and place costs.
APPLICATIONS
⢠General purpose switching and amplification
⢠Inverter and interface circuits
⢠Circuit driver.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VCEO
collector-emitter
voltage
IO
output current (DC)
R1
bias resistor
R2
bias resistor
TYP.
â
â
10
10
MAX. UNIT
50 V
100 mA
â
kΩ
â
kΩ
DESCRIPTION
NPN resistor-equipped transistor (see âSimplified outline,
symbol and pinningâ for package details).
PRODUCT OVERVIEW
TYPE NUMBER
PDTC114EE
PDTC114EEF
PDTC114EK
PDTC114EM
PDTC114ES
PDTC114ET
PDTC114EU
PACKAGE
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
EIAJ
SC-75
SC-89
SC-59
SC-101
SC-43
â
SC-70
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE PNP COMPLEMENT
09
09
04
DS
TC114E
*16(1)
*09(1)
PDTA114EE
PDTA114EEF
PDTA114EK
PDTA114EM
PDTA114ES
PDTA114ET
PDTA114EU
2004 Aug 05
2
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