PDTA124X Datasheet, PDF (5/12 Pages) NXP Semiconductors – PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 47 kohm

NXP Semiconductors
PDTA124X series
PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ
6. Thermal characteristics
Table 7.
Symbol
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT416
SOT490
SOT346
SOT883
SOT54
SOT23
SOT323
Conditions
in free air
Min Typ Max Unit
[1] _-
-
833 K/W
[1][2] _-
-
500 K/W
[1] _-
-
500 K/W
[2][3] _-
-
500 K/W
[1] _-
-
250 K/W
[1] _-
-
500 K/W
[1] _-
-
625 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
7. Characteristics
Table 8. Characteristics
T_amb = 25 °C unless otherwise specified
Symbol Parameter
Conditions
I_CBO
collector-base cut-off
V_CB = −50 V; I_E = 0 A
current
I_CEO
collector-emitter cut-off V_CE = −30 V; I_B = 0 A
current
V_CE = −30 V; I_B = 0 A;
T_j = 150 °C
I_EBO
emitter-base cut-off
current
V_EB = −5 V; I_C = 0 A
h_FE
V_CEsat
V_I(off)
V_I(on)
R1
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
V_CE = −5 V; I_C = −5 mA
I_C = −10 mA;
I_B = −0.5 mA
V_CE = −5 V; I_C = −100 µA
V_CE = −0.3 V; I_C = −2 mA
R2/R1 bias resistor ratio
C_c
collector capacitance
V_CB = −10 V; I_E = i_e = 0 A;
f = 1 MHz
Min Typ Max Unit
-
-
−100 nA
-
-
−1 µA
-
-
−50 µA
-
-
−120 µA
80 -
-
-
-
−150 mV
-
−0.8 −0.5 V
−2 −1.1 -
V
15.4 22 28.6 kΩ
1.7 2.1 2.6
-
-
3
pF
PDTA124X_SER_8
Product data sheet
Rev. 08 — 3 September 2009
© NXP B.V. 2009. All rights reserved.
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