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PDTA124X Datasheet, PDF (4/12 Pages) NXP Semiconductors – PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 47 kohm
NXP Semiconductors
PDTA124X series
PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
collector-base voltage
open emitter
-
VCEO
collector-emitter voltage open base
-
VEBO
emitter-base voltage
open collector
-
VI
input voltage
positive
-
negative
-
IO
output current (DC)
-
ICM
peak collector current
-
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT416
[1] -
SOT490
[1][2] -
SOT346
[1] -
SOT883
[2][3] -
SOT54
[1] -
SOT23
[1] -
SOT323
[1] -
Tstg
storage temperature
−65
Tj
junction temperature
-
Tamb
ambient temperature
−65
Max
−50
−50
−7
+7
−40
−100
−100
150
250
250
250
500
250
200
+150
150
+150
Unit
V
V
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
mW
°C
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
PDTA124X_SER_8
Product data sheet
Rev. 08 — 3 September 2009
© NXP B.V. 2009. All rights reserved.
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