PDTA123T Datasheet, PDF (5/10 Pages) NXP Semiconductors – PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = open

NXP Semiconductors
PDTA123T series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
7. Characteristics
Table 8. Characteristics
T_amb = 25 °C unless otherwise specified
Symbol Parameter
Conditions
I_CBO
collector-base cut-off V_CB = −50 V; I_E = 0 A
current
I_CEO
collector-emitter cut-off V_CE = −30 V; I_B = 0 A
current
V_CE = −30 V; I_B = 0 A;
T_j = 150 °C
I_EBO
emitter-base cut-off
V_EB = −5 V; I_C = 0 A
current
h_FE
V_CEsat
DC current gain
collector-emitter
saturation voltage
V_CE = −5 V; I_C = −20 mA
I_C = −10 mA; I_B = −0.5 mA
R1
bias resistor 1 (input)
C_c
collector capacitance V_CB = −10 V; I_E = i_e = 0 A;
f = 1 MHz
Min Typ Max Unit
-
-
−100 nA
-
-
−1 µA
-
-
−50 µA
-
-
−100 nA
30 -
-
-
-
−150 mV
1.54 2.2
-
-
2.86 kΩ
3
pF
500
h_FE
400
(1)
006aaa691
300
(2)
200
(3)
100
0
−10^−1
−1
−10
−10²
I_C (mA)
V_CE = −5 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
−1
V_CEsat
(V)
−10^−1
(1)
(2)
(3)
006aaa692
−10^−2
−10^−1
−1
−10
−10²
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
PDTA123T_SER_2
Product data sheet
Rev. 02 — 3 September 2009
© NXP B.V. 2009. All rights reserved.
5 of 10