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PDTA114Y Datasheet, PDF (5/14 Pages) NXP Semiconductors – PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = 47 kOHM | |||
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NXP Semiconductors
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
Product data sheet
PDTA114Y series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
VCB = â50 V; IE = 0
VCE = â30 V; IB = 0
VCE = â30 V; IB = 0; Tj = 150 °C
VEB = â5 V; IC = 0
VCE = â5 V; IC = â5 mA
IC = â5 mA; IB = â0.25 mA
IC = â100 μA; VCE = â5 V
IC = â1 mA; VCE = â0.3 V
â
â
â100 nA
â
â
â1
μA
â
â
â50 μA
â
â
â150 μA
100 â
â
â
â
â100 mV
â
â0.7 â0.5 V
â1.4 â0.8 â
V
7
10
13
kΩ
R-----2--
R1
resistor ratio
3.7 4.7 5.7
Cc
collector capacitance
IE = ie = 0; VCB = â10 V; f = 1 MHz â
â
3
pF
2004 Aug 02
5
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