PDTA114Y Datasheet, PDF (2/14 Pages) NXP Semiconductors – PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = 47 kOHM

NXP Semiconductors
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
Product data sheet
PDTA114Y series
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_CEO
collector-emitter
voltage
I_O
output current (DC)
R1
bias resistor
R2
bias resistor
TYP.
−
−
10
47
MAX. UNIT
−50 V
−100 mA
−
kΩ
−
kΩ
DESCRIPTION
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE NUMBER
PDTA114YE
PDTA114YEF
PDTA114YK
PDTA114YM
PDTA114YS
PDTA114YT
PDTA114YU
PACKAGE
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
EIAJ
SC-75
SC-89
SC-59
SC-101
SC-43
−
SC-70
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE NPN COMPLEMENT
36
37
54
DF
TA114Y
*29⁽¹⁾
*55⁽¹⁾
PDTC114YE
PDTC114YEF
PDTC114YK
PDTC114YM
PDTC114YS
PDTC114YT
PDTC114YU
2004 Aug 02
2